In this paper, we analyse the performance of a silicon nano-opto-electro-mechanical system (NOEMS) applied as an optical modulator, based on a suspended slot waveguide driven by electrostatic forces. The analysis is carried out with the help of the finite element analysis (FEA) method involving the influences from Casimir force, optical force and electrostatic force. The performance of the. The rib waveguide region to the slot-waveguide region. One of the most critical parameters for an accumulation type modulator is the insulating layer thickness (t ox) of the MOS-capacitor. Of course, there are several other parameters which also directly or indirectly influence the device performance, such as.
We present a graphene-on-silicon (GoS) suspended vertical slot waveguide. By changing the Fermi level of graphene, the variation in the effective refractive index (RI) of the waveguide is a factor of two larger than that in the traditional GoS rib waveguide. The improvement is due to the light-intensity enhancement and the poor confinement of the optical mode in the slot nanostructure. We design Mach–Zehnder interferometer (MZI) and microring modulators based on the GoS suspended vertical slot waveguide. Our calculations show that the modulators can be energy-efficient and footprint-compact due to the large phase shift of the propagating mode in the waveguide after applying a gate voltage on the graphene. Fabrication of our design is easy and CMOS-compatible. It paves the way for chip-integrated electronic-RI modulators.
© 2016 Optical Society of America
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We report an all-dielectric electro-optic (EO) polymer/TiO2 multilayer slot waveguide modulator with low optical insertion loss for high-speed operations. The EO polymer is sandwiched between thin TiO2 slot waveguide films to improve mode confinement in the EO polymer. The structure increased the mode confinement in the TiO2 and EO polymer slot layers and reduced the electrode distance between the Au electrodes without introducing optical loss from the metal electrodes. The half-wave voltage of the modulator was 6.5 V for a 5-mm-long electrode at a wavelength of 1550 nm. The half-wave voltage and length product was 3.25 V.cm.